Self-assembled vertically stacked van der Waals In2O3/In2S3 heterojunction for ultra-sensitive room-temperature NO2 gas detection

by factors of 5.7 and 1.8, respectively. Furthermore, the sensor demonstrates outstanding selectivity, a low detection limit of 20.6 ppb, and excellent long-term stability. These superior sensing performances arise from optimized adsorption-desorption dynamics at the oxide/sulfide interface, enabled by the self-assembled vdW architecture. This study not only advances the scalable synthesis of 2D vdW heterostructures but also highlights interfacial engineering as a powerful strategy for designing next-generation, low-power gas sensors.