Impact of Al Doping on the Structural and Electrochemical Properties of SnO ₂ Wide Bandgap Semiconductor Nanoparticles

Abstract The present communication showcases the synthesis, characterization, and utilization of pure and aluminum‐doped tin oxide nanoparticles (Al‐SnO 2 ) in supercapacitor applications. The electrochemical performance of the synthesized electrodes was assessed through galvanostatic charge–discharge measurements, cyclic voltammetry (CV) analysis, and electrochemical impedance spectroscopy. Higher specific capacitance was observed for aluminum‐doped tin oxide (727 Fg −1 ) compared to pure SnO 2 (463 Fg −1 ) at a current density of 10 mAcm −2 . Additionally, Al‐doped SnO 2 exhibited better capacitance retention, with 91.8% of its initial capacitance maintained over 5000 charging–discharging cycles at a current density of 10 mA/cm 2 , whereas pure SnO 2 retained 83.9% of the initial capacitance. These findings highlight significant potential of aluminum‐doped tin oxide nanoparticles for energy storage applications.