Low-temperature, vacuum-free deposition of N-DMBI-H enables high conductivities in organic semiconductors.

Doping is an essential process for controlling the electronic properties of organic semiconductors. While n-type doping has advanced significantly in recent years, processability remains a critical bottleneck: conventional methods rely on inert atmospheres or vacuum systems, increasing complexity and costs. To overcome these limitations, we developed a low-temperature, atmospheric-pressure vapor doping method using the commercially available dopant N-DMBI-H. Optimized for the prototypical fullerene derivative PCBM, this approach yields conductivities exceeding 1 S cm-1, exceeding those achieved by traditional bulk doping. Critically, the mild deposition conditions enable entirely ambient processing, from doping to encapsulation, with only minimal performance trade-offs. This simplification reduces pipeline complexity, processing costs, and environmental impact, paving the way for scalable fabrication of high-performance n-type organic films.