Computational design of two‐dimensional <scp> MA ₂ Z ₄ </scp> family field‐effect transistor for future Ångström‐scale <scp>CMOS</scp> technology nodes

Abstract Advancing complementary metal–oxide–semiconductor (CMOS) technology into the sub‐1‐nm Ångström‐scale technology nodes is expected to involve alternative semiconductor materials as silicon transistors encounter severe performance degradation at physical gate lengths below 10 nm. Two‐dimensional (2D) semiconductors have emerged as strong candidates for overcoming the short‐channel effects due to their atomically thin bodies that significantly improves the gate control in aggressively scaled field‐effect transistors (FETs). Among the growing library of 2D materials, MAZ family has attracted increasing attention for its remarkable ambient stability, suitable bandgaps, and favorable carrier transport characteristics. While experimental realization of sub‐10‐nm 2D FETs remains technologically demanding, computational device simulations using first‐principles density functional theory combined with nonequilibrium Green's function transport simulations provide a powerful and cost‐effective route for assessing the performance limits and optimal design of ultrascaled FET. This review consolidates the current progress in the computational design of MAZ family FETs. We review the physical properties of MoSiN that makes them compelling candidates for transistor applications, and the simulated device performance and optimization strategy of MAZ family FETs. Finally, we discuss the key challenges and research gaps, as well as the future directions of MAZ family FET research toward the Ångström‐scale CMOS era. image