Doping Zinc Oxide Quantum Dot Photodetectors With a Keplarate‐Type Polyoxometalate for Enhanced Performance by Suppressing Oxygen Vacancies and Enhancing Charge Transports

Zinc oxide quantum dots (ZnO QDs) are promising for photodetectors but are limited by surface oxygen vacancies that impair photocurrent and stability. This study addresses this by incorporating the polyoxometalate {Mo 132 } into ZnO QDs to modify their electronic properties. {Mo 132 } broadens the light absorption range and its multiple redox‐active metal centers facilitate efficient multielectron transport. Crucially, this process passivates surface traps and suppresses oxygen vacancy formation, thereby enhancing charge separation and transport. Experimental results confirm that {Mo 132 } doping significantly enhances the device performance. The photocurrent increased from 2100 to 2700 μA in I‐T tests. Under an illumination intensity of 80 mW·cm −2 and a bias voltage of 5 V, the responsivity ( R ) reaches 18.35 mA·W −1 . Furthermore, device stability was substantially improved, with the photocurrent retaining 81.08% of its initial value after 96 h. XPS measurements verified a significant (11.4%) reduction in the oxygen vacancy concentration. This work demonstrates that the unique molecular‐level electronic properties of polyoxometalates offer a novel and effective strategy for developing high‐performance, stable photodetectors, broadening their application in optoelectronics.