Yiran Yan, Qiang Fu, Jiarong Wang, Tianjiao Chu, Liujiang Zhang, Zhenye Liang, Jia Wang, Lin Yang, Xiangrong Zhu, Zhihong Xie, Jianwei Yang, Renjie Zou, Bin Kan, Lina Li, Xiang Gao, Jin Huang, Liyou Yang, Linfeng Lu, Xiaofei Ji
ABSTRACT Wide‐bandgap perovskite absorbers are essential for achieving high‐efficiency perovskite/silicon tandem solar cells. However, in p‐i‐n architectures, their inherent strong p ‐type (or weak n ‐type) characteristics hinder electron extraction, causing significant open‐circuit voltage ( V OC ) deficits. To address these challenges, we developed 3‐phthalimidopropanoic acid (DPA). This molecular passivation material leverages the electron‐deficient properties of its phthalimide core. DPA delivers three synergistic effects: it acts as an interface dipole layer to precisely align surface energy levels, enhance the surface n ‐type characteristics, and boost quasi‐Fermi level splitting (QFLS); it forms a gradient distribution during anti‐solvent processing to modulate crystallization kinetics, improve film morphology, and minimize defects; and it achieves carboxyl‐group chelation of undercoordinated Pb 2+ to effectively passivate surface and bulk traps, thereby significantly enhancing device stability. Consequently, a DPA‐modified wide‐bandgap (1.68 eV) perovskite solar cell achieves an efficiency of 22.91%. Moreover, a two‐terminal perovskite‐silicon tandem solar cell delivers an efficiency of 31.66%. This approach provides a robust strategy for efficient and stable tandem photovoltaics, advancing n ‐type interface engineering.