An Optoelectronic Artificial Synapse Based on MXene/CuInS ₂ Memristor for Novel Logical Operations and Neural Morphology Calculation

Abstract With the rapid development of artificial intelligence, the demand for efficient low‐power electronic devices has surged. Thus, memristors have attracted widespread attention in the fields of optoelectronics and neuromorphic computing. In this work, MXene/CuInS 2 optoelectronic memristors are successfully prepared via the low‐temperature solution method and spin‐coating technique, showing good electrical performances with a high on‐off ratio of 10 2 , and good stability after 400 cycles and resistance retention within 10⁶ s. The short‐term potentiation (STP), long‐term potentiation (LTP), short‐term depression (STD), and long‐term depression (LTD) of biological synapses are mimicked, and visual adaptation and Pavlovian learning models are realized via optoelectronic voltage regulation by the device. The carrier transport mechanism is reconstructed by MXene via the interfacial dipole effect, with hole injection suppressed in the dark and electron‐hole separation promoted under light for photocurrent response inversion. Furthermore, a logic gate circuit with a signal‐gating function is constructed by using humidity, voltage, and ultraviolet light, and its potential in multifunctional information processing is verified. The results provide new ideas for developing novel memristors integrating neuromorphic computing and logic operation functions.