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◆ Advanced materials (Deerfield Beach, Fla.)2026-08-11

Above Room Temperature Ferroelectricity in Epitaxially Strained KTaO3.

Tobias Schwaigert, Salva Salmani-Rezaie, Sankalpa Hazra, Utkarsh Saha, Maya Ramesh, Aiden Ross, Betül Pamuk, Long-Qing Chen, David A Muller, Darrell G Schlom, Venkatraman Gopalan, Kaveh Ahadi

原始摘要(英文原文)· Original abstract
Epitaxial strain is a powerful means to engineer emergent phenomena in thin films and heterostructures. Here, we demonstrate that KTaO 3 , a cubic perovskite in bulk form, can be epitaxially strained into a highly tunable ferroelectric. KTaO 3 films grown commensurate to SrTiO 3 (001) substrates experience an in-plane strain of -2.1 % that transforms the cubic structure into a tetragonal polar phase with a transition temperature of 475 K , consistent with our thermodynamic calculations. We show that the Curie temperature and the spontaneous electric polarization can be systematically controlled with epitaxial strain. Scanning transmission electron microscopy reveals cooperative polar displacements of the potassium columns with respect to the neighboring tantalum columns at room temperature. Optical second-harmonic generation results are described by a tetragonal polar point group ( 4 m m ), indicating the emergence of a global polar ground state. We observe a ferroelectric hysteresis response using metal-insulator-metal capacitor test structures. The results demonstrate a robust intrinsic ferroelectric state in epitaxially strained KTaO 3 thin films.
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Above Room Temperature Ferroelectricity in Epitaxially Strained KTaO3. — 科研速览 Science Skim