Tunable Complementary Doping Strategy Enables High‐Performance Homo‐Channel CMOS in Monolayer WSe ₂

ABSTRACT Two‐dimensional semiconductors are promising channel materials for next‐generation electronics because of their atomic thickness and strong electrostatic control. Among them, monolayer WSe 2 is particularly attractive for complementary logic owing to its balanced electron and hole transport. However, realizing high‐performance homo‐channel CMOS remains limited by insufficient polarity control, Fermi‐level pinning, and contact resistance. Here, a complementary polarity‐engineering strategy is demonstrated in monolayer WSe 2 using AlN and MoO x . AlN induces n‐type modulation through interfacial/electrostatic effects, whereas MoO x enables p‐type behavior through high‐work‐function charge transfer. The doping strength is tuned by deposition conditions and post‐annealing, enabling systematic threshold‐voltage control. As a result, AlN‐modulated n‐FETs exhibit a 2–3 orders of magnitude enhancement in current density and low contact resistance of ∼1 kΩ·µm, while MoO x ‐modulated p‐FETs achieve current densities above 400 µA/µm. By integrating both polarities on a single WSe 2 channel, homo‐channel CMOS inverters exhibit near‐ideal switching points (V M ≈ V DD /2), high noise margins(∼80%–90% of V DD ), and low static power consumption of ∼0.1–10 pW. This work provides a route toward energy‐efficient 2D CMOS platforms.