Hao Sun, Qiong Lu, Fengxia Yang, Xi Zhang, Xiaofei Dong, Jianbiao Chen, Xi Zhang, Jiangtao Chen, Yuanzhang Zhao, Y Anita Li
ABSTRACT Integrating the intrinsic in‐memory computing and temporal dynamic response characteristics of memristors directly into the design of time‐varying information processing and hardware security is pivotal for boosting the efficiency, security, and dynamic adaptability of big data‐driven artificial intelligence. Herein, we report an Ag/AgBiS 2 /Mo synaptic memristor featuring a high switching ratio (>10 5 ) and long‐term retention (>10 4 s), which exhibits electrically and optically modulated diverse synaptic plasticity behaviors, including excitatory postsynaptic current (EPSC), paired‐pulse facilitation/depression (PPF/D), long‐term potentiation/depression (LTP/D), short/long‐term memory (S/LTM) spike‐timing/rate/duration/voltage‐dependent plasticity (STDP, SRDP, SDDP, SVDP). Notably, this AgBiS 2 ‐based memristor enables co‐integrated two core functionalities: 1) Model‐level encryption and authorized inference. Device‐based physically unclonable constraints yield an inference accuracy of 88.5% under a valid authorization key, whereas the accuracy plummets to 18.9% with an invalid key. 2) Time‐fading trajectory (TF‐Traj) modeling and dynamic perception. A trajectory classification accuracy of 95.2% is achieved on the constructed 2D TF‐Traj with significantly enhanced accuracy and stability of single‐step trajectory prediction. The results directly bridge the device physics, dynamic intelligent perception, and information security, highlighting the promise of memristor's intrinsic dynamics for advancing trustworthy, multi‐scenario neuromorphic computing and high‐confidence intelligent systems.