Gentle‐Solution‐Assisted Ultrafast Sacrificial Decomposition of La _0.7 Sr _0.3 MnO ₃ Epitaxial Films

ABSTRACT Freestanding oxide ferroelectrics have attracted increasing attention due to their structural tunability, mechanical compatibility, and potential applications in next‐generation nonvolatile ferroelectric semiconductor devices. Here, we achieved a gentle decomposition of La 0.7 Sr 0.3 MnO 3 (LSMO) sacrificial layer through an electrodynamic decomposition strategy, which can achieve rapid decomposition in weak acids, even in water that undergoes a small amount of hydrolysis reaction. The fastest decomposition time of LSMO is only 20 s, which is at least three orders of magnitude shorter than the time required for strong acid etching. The controllable decomposition time is within the range of 20 to 250 s by screening solution. Density functional theory calculations and electrodynamic decomposition curves jointly reveal the intrinsic chemical reasons for the ultrafast decomposition efficiency, specifically the adsorption energy and electric field effect. The procedure and results for fabricating high‐integrity freestanding PbZrO 3 films using acetic acid and sodium chloride solutions have been demonstrated. This gentle electrodynamic decomposition strategy, integrating rapidity, low destructiveness, and various solutions compatibility, paves the way for further exploring the application potential of freestanding oxide materials in multifunctional semiconductor devices.