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◆ Advanced Functional Materials2026-04-01· Materials science

Pentagonal 2D Altermagnets: Material Screening and Altermagnetic Tunneling Junction Device Application (Adv. Funct. Mater. 28/2026)

Jianhua Wang, Xia Yang, Zongmeng Yang, Jiangbo Lu, Pin Ho, Wenhong Wang, Yee Sin Ang, Zhenxiang Cheng, Shibo Fang

原始摘要(英文原文)· Original abstract
Pentagonal 2D Altermagnets In their Research Article (10.1002/adfm.202505145), Yee Sin Ang, Zhenxiang Cheng, Shibo Fang, and co-workers identify the first altermagnetic second-order topological insulator, Penta-MnS2, and design a related high-performance altermagnetic tunneling junction. The figure illustrates a tunneling junction composed of MnS2, featuring both spin-polarized corner states and altermagnetic Bloch states. This work provides a new direction for the development of future low-power, high-speed memory devices.
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Pentagonal 2D Altermagnets: Material Screening and Altermagnetic Tunneling Junction Device Application (Adv. Funct. Mater. 28/2026) — 科研速览 Science Skim