Toughening β‐Ga ₂ O ₃ via Mechanically Seeded Dislocations

Abstract β‐Ga 2 O 3 is a promising candidate for next‐generation semiconductors, but is limited by its intrinsic brittleness, which hinders its application in flexible electronics and high‐precision devices. This study explores a new approach to improving the damage tolerance of (001)‐oriented β‐Ga 2 O 3 by introducing mechanically seeded dislocations via surface scratching. By applying a Brinell indenter to scratch the surface along the [100] direction, Edge‐type dislocations belonging to the (011)[01‐1] and/or (0‐11)[011] slip systems are effectively generated within a mesoscale wear track. Through a combination of nanoindentation tests, surface morphology analysis, and microstructural characterization using scanning electron microscopy (SEM) and transmission electron microscopy (TEM), it is revealed that the introduction of dislocations significantly mitigates the formation of cleavage cracks during indentation, in contrast to that observed in as‐received β‐Ga 2 O 3 . The mechanically seeded dislocations in the subsurface layers play an important role in preventing brittle fracture by facilitating stable plastic deformation.